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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 55V 45A TO-263 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete PG-TO263-3-2 0 1000 N-Channel - 55V 45A (Tc) 13.1 mOhm @ 26A, 10V 2.2V @ 30µA 75nC @ 10V 3600pF @ 25V 5V, 10V ±16V 65W (Tc)
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Infineon Technologies MOSFET N-CH 55V 45A TO-220 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3-1 0 500 N-Channel - 55V 45A (Tc) 13.4 mOhm @ 26A, 10V 2.2V @ 30µA 75nC @ 10V 3600pF @ 25V 5V, 10V ±16V 65W (Tc)
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Infineon Technologies MOSFET N-CH 55V 89A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 350 N-Channel - 55V 89A (Tc) 10 mOhm @ 46A, 10V 2V @ 250µA 98nC @ 5V 3600pF @ 25V 4V, 10V ±16V 3.8W (Ta), 170W (Tc)
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Infineon Technologies MOSFET N-CH 55V 89A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 450 N-Channel - 55V 89A (Tc) 10 mOhm @ 46A, 10V 2V @ 250µA 98nC @ 5V 3600pF @ 25V 4V, 10V ±16V 3.8W (Ta), 170W (Tc)
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Infineon Technologies MOSFET N-CH 20V 174A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 50 N-Channel - 20V 174A (Tc) 4 mOhm @ 104A, 10V 4V @ 250µA 120nC @ 10V 3600pF @ 25V 10V ±20V 200W (Tc)
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Infineon Technologies MOSFET N-CH 55V 89A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel - 55V 89A (Tc) 10 mOhm @ 46A, 10V 2V @ 250µA 98nC @ 5V 3600pF @ 25V 4V, 10V ±16V 3.8W (Ta), 170W (Tc)
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Infineon Technologies MOSFET N-CH 55V 89A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 50 N-Channel - 55V 89A (Tc) 10 mOhm @ 46A, 10V 2V @ 250µA 98nC @ 5V 3600pF @ 25V 4V, 10V ±16V 3.8W (Ta), 170W (Tc)
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Infineon Technologies MOSFET N-CH 55V 89A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 800 N-Channel - 55V 89A (Tc) 10 mOhm @ 46A, 10V 2V @ 250µA 98nC @ 5V 3600pF @ 25V 4V, 10V ±16V 3.8W (Ta), 170W (Tc)
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Infineon Technologies MOSFET N-CH 55V 89A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 200 N-Channel - 55V 89A (Tc) 10 mOhm @ 46A, 10V 2V @ 250µA 98nC @ 5V 3600pF @ 25V 4V, 10V ±16V 3.8W (Ta), 170W (Tc)
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992
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Infineon Technologies MOSFET N-CH 55V 89A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 55V 89A (Tc) 10 mOhm @ 46A, 10V 2V @ 250µA 98nC @ 5V 3600pF @ 25V 4V, 10V ±16V 170W (Tc)
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1,692
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Infineon Technologies MOSFET N-CH 55V 52A TO220FP TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB Full-Pak 0 1 N-Channel - 55V 52A (Tc) 10 mOhm @ 28A, 10V 2V @ 250µA 98nC @ 5V 3600pF @ 25V 4V, 10V ±16V 58W (Tc)
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2,400
In-stock
Infineon Technologies MOSFET N-CH 55V 89A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D2PAK 0 800 N-Channel - 55V 89A (Tc) 10 mOhm @ 46A, 10V 2V @ 250µA 98nC @ 5V 3600pF @ 25V 4V, 10V ±16V 3.8W (Ta), 170W (Tc)
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