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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 500V 400MA SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 0 1000 N-Channel - 500V 400mA (Ta) 4 Ohm @ 400mA, 10V 4V @ 1mA - 400pF @ 25V 10V ±20V 1.8W (Ta)
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Infineon Technologies MOSFET N-CH 500V 400MA SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) PG-SOT223-4 0 1000 N-Channel - 500V 400mA (Ta) 4 Ohm @ 400mA, 10V 4V @ 1mA - 400pF @ 25V 10V ±20V 1.8W (Ta)
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Infineon Technologies MOSFET N-CH 400V 500MA SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 0 1000 N-Channel - 400V 500mA (Ta) 3 Ohm @ 500mA, 10V 4V @ 1mA - 400pF @ 25V 10V ±20V 1.8W (Ta)
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Infineon Technologies MOSFET N-CH 400V 500MA SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 0 1000 N-Channel - 400V 500mA (Ta) 3 Ohm @ 500mA, 10V 4V @ 1mA - 400pF @ 25V 10V ±20V 1.8W (Ta)
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Infineon Technologies MOSFET N-CH 55V 2.8A SOT223 TO-261-4, TO-261AA HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) SOT-223 0 1840 N-Channel - 55V 2.8A (Ta) 75 mOhm @ 2.8A, 10V 4V @ 250µA 18.3nC @ 10V 400pF @ 25V 10V ±20V 1W (Ta)
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Infineon Technologies MOSFET N-CH 55V 2.8A SOT223 TO-261-4, TO-261AA HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-223 0 2500 N-Channel - 55V 2.8A (Ta) 75 mOhm @ 2.8A, 10V 4V @ 250µA 18.3nC @ 10V 400pF @ 25V 10V ±20V 1W (Ta)
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Infineon Technologies MOSFET N-CH 55V 2.8A SOT223 TO-261-4, TO-261AA HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SOT-223 0 80 N-Channel - 55V 2.8A (Ta) 75 mOhm @ 2.8A, 10V 4V @ 250µA 18.3nC @ 10V 400pF @ 25V 10V ±20V 1W (Ta)
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Infineon Technologies MOSFET N-CH 55V 2.8A SOT-223 TO-261-4, TO-261AA HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Not For New Designs SOT-223 0 2500 N-Channel - 55V 2.8A (Ta) 75 mOhm @ 2.8A, 10V 4V @ 250µA 18.3nC @ 10V 400pF @ 25V 10V ±20V 1W (Ta)
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Infineon Technologies MOSFET N-CH 400V 500MA SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) - -55°C ~ 150°C (TJ) Active PG-SOT223-4 0 1000 N-Channel - 400V 500mA (Ta) 3 Ohm @ 500mA, 10V 4V @ 1mA - 400pF @ 25V 10V ±20V 1.8W (Ta)
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Infineon Technologies MOSFET N-CH 500V 0.4A SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-SOT223-4 0 1000 N-Channel - 500V 400mA (Ta) 4 Ohm @ 400mA, 10V 4V @ 1mA - 400pF @ 25V 10V ±20V 1.8W (Ta)
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Infineon Technologies MOSFET N-CH 55V 2.8A SOT223 TO-261-4, TO-261AA HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223 0 2500 N-Channel - 55V 2.8A (Ta) 75 mOhm @ 2.8A, 10V 4V @ 250µA 18.3nC @ 10V 400pF @ 25V 10V ±20V 1W (Ta)
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