Build a global manufacturer and supplier trusted trading platform.
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 600V TO247-4 TO-247-4 CoolMOS™ P6 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-4 0 240 N-Channel - 600V 37.9A (Tc) 99 mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70nC @ 10V 3330pF @ 100V 10V ±20V 278W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 600V TO247-3 TO-247-3 CoolMOS™ P6 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 0 1 N-Channel - 600V 37.9A (Tc) 99 mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70nC @ 10V 3330pF @ 100V 10V ±20V 278W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 600V TO220-3 TO-220-3 CoolMOS™ P6 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO-220-3 0 1 N-Channel - 600V 37.9A (Tc) 99 mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70nC @ 10V 3330pF @ 100V 10V ±20V 278W (Tc)
Default Photo
GET PRICE
RFQ
500
In-stock
Infineon Technologies MOSFET N-CH 600V TO220FP-3 TO-220-3 Full Pack CoolMOS™ P6 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO-220-FP 0 1 N-Channel - 600V 37.9A (Tc) 99 mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70nC @ 10V 3330pF @ 100V 10V ±20V 34W (Tc)
Page 1 / 1