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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 60V 90A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 3000 | N-Channel | - | 60V | 90A (Tc) | 4.8 mOhm @ 66A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4360pF @ 25V | 6V, 10V | ±20V | 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 90A | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET®, StrongIRFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D-PAK (TO-252AA) | 0 | 3000 | N-Channel | - | 60V | 90A (Tc) | 4.8 mOhm @ 66A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4360pF @ 25V | 6V, 10V | ±20V | 140W (Tc) | |||
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1,911
In-stock
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Infineon Technologies | MOSFET N-CH 60V 90A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK (TO-252AA) | 0 | 1 | N-Channel | - | 60V | 90A (Tc) | 4.8 mOhm @ 66A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4360pF @ 25V | 6V, 10V | ±20V | 140W (Tc) |
