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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 20V 7A 8DSO 8-SOIC (0.154", 3.90mm Width) OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active P-DSO-8 0 2500 P-Channel - 20V 7A (Ta) 21 mOhm @ 8.9A, 4.5V 1.2V @ 100µA 39nC @ 4.5V 3750pF @ 15V 2.5V, 4.5V ±12V 1.6W (Ta)
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Infineon Technologies MOSFET P-CH 30V 12A 8DSO 8-SOIC (0.154", 3.90mm Width) OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-DSO-8 0 2500 P-Channel - 30V 12A (Ta) 8 mOhm @ 14.8A, 10V 3.1V @ 150µA 81nC @ 10V 6750pF @ 15V 6V, 10V ±25V 1.6W (Ta)
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Infineon Technologies MOSFET P-CH 30V 12A 8DSO 8-SOIC (0.154", 3.90mm Width) OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-DSO-8 0 2500 P-Channel - 30V 12A (Ta) 8 mOhm @ 14.8A, 10V 3.1V @ 150µA 81nC @ 10V 6750pF @ 15V 6V, 10V ±25V 1.6W (Ta)
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VIEW
RFQ
Infineon Technologies MOSFET P-CH 20V 12A 8SOIC 8-SOIC (0.154", 3.90mm Width) OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-DSO-8 0 2500 P-Channel - 20V 12A (Ta) 8 mOhm @ 14.9A, 4.5V 1.2V @ 250µA 88nC @ 4.5V 9600pF @ 15V 2.5V, 4.5V ±12V 1.6W (Ta)
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