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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$3.500
VIEW
RFQ
Infineon Technologies MOSFET N-CH 500V 13A TO-247 TO-247-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 0 1 N-Channel - 500V 13A (Tc) 250 mOhm @ 7.8A, 10V 3.5V @ 520µA 36nC @ 10V 1420pF @ 100V 10V ±20V 114W (Tc)
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Per Unit
$0.723
RFQ
5,000
In-stock
Infineon Technologies MOSFET N-CH 100V 71A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 100V 11A (Ta), 71A (Tc) 11.8 mOhm @ 50A, 10V 4V @ 70µA 56nC @ 10V 3700pF @ 50V 10V ±20V 114W (Tc)
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Per Unit
$0.804
RFQ
5,000
In-stock
Infineon Technologies MOSFET N-CH 100V 71A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 100V 10.6A (Ta), 71A (Tc) 12.3 mOhm @ 50A, 10V 2.4V @ 72µA 68nC @ 10V 4900pF @ 50V 4.5V, 10V ±20V 114W (Tc)
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