- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
-
- 1 MOhms (4)
- 1.2 mOhms (4)
- 1.25 mOhms (2)
- 1.3 mOhms (1)
- 1.4 mOhms (1)
- 1.5 mOhms (5)
- 1.6 mOhms (3)
- 1.8 mOhms (3)
- 10.3 mOhms (1)
- 10.6 mOhms (1)
- 17 mOhms (1)
- 2 mOhms (4)
- 2.5 mOhms (2)
- 2.6 mOhms (1)
- 2.7 mOhms (2)
- 3 mOhms (2)
- 3.2 mOhms (1)
- 4 mOhms (1)
- 4.2 mOhms (2)
- 4.5 mOhms (1)
- 41 mOhms (1)
- 5 mOhms (2)
- 5.6 mOhms (2)
- 6.7 mOhms (1)
- 600 uOhms (3)
- 8.5 mOhms (1)
- 800 uOhms (2)
- 900 uOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
56 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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33,436
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 800 uOhms | 1.2 V | 85 nC | Enhancement | OptiMOS | |||
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27,001
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 58A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 58 A | 4.2 mOhms | 1.2 V | 14 nC | Enhancement | OptiMOS | |||
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10,906
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 900 uOhms | 1.2 V | 78 nC | Enhancement | OptiMOS | |||
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10,635
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.8 mOhms | 1.2 V to 2 V | 29 nC | OptiMOS | ||||
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9,379
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.2 mOhms | 1.2 V | 52 nC | Enhancement | ||||
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2,212
In-stock
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Infineon Technologies | MOSFET LV POWER MOS | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.25 mOhms | 1.2 V | 20 nC | Enhancement | ||||
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11,702
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 2 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | |||
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4,630
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1 MOhms | 1 V | 168 nC | Enhancement | ||||
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3,890
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 75 A | 2.5 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | |||
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5,056
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 180 A | 600 uOhms | 1.2 V | 343 nC | Enhancement | ||||
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10,370
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 84A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 84 A | 2.7 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | |||
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1,697
In-stock
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Infineon Technologies | MOSFET 25V Dual N-Ch 1.45mOhm 31nC 45A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 64 A | 3.2 mOhms | 1.6 V | 15 nC, 47 nC | Enhancement | FastIRFet | |||
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4,489
In-stock
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Infineon Technologies | MOSFET LV POWER MOS | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.25 mOhms | 1.2 V | 20 nC | Enhancement | ||||
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3,236
In-stock
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Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 25 V | 220 A | 1.6 mOhms | 46 nC | Directfet | |||||||
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3,934
In-stock
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Infineon Technologies | MOSFET LV POWER MOS | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 82 A | 4 mOhms | 1.2 V | 12 nC | Enhancement | ||||
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GET PRICE |
43,220
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 3 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||
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5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 900 uOhms | 1.2 V | 78 nC | Enhancement | OptiMOS | |||
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4,710
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 163A CanPAK-3 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 163 A | 1.3 mOhms | 1.2 V to 2 V | 62 nC | Enhancement | OptiMOS | |||
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3,935
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | ||||
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4,071
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | ||||
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3,950
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.8 mOhms | 1.2 V to 2 V | 19 nC | OptiMOS | ||||
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3,416
In-stock
|
Infineon Technologies | MOSFET MOSFET N-CH 25V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.6 mOhms | 1.8 V | 111 nC | StrongIRFET | ||||
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4,800
In-stock
|
Infineon Technologies | MOSFET DirectFET | SMD/SMT | DirectFET-S1 | Reel | Si | N-Channel | 25 V | 16 A | 5.6 mOhms | Directfet | ||||||||||
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23,701
In-stock
|
Infineon Technologies | MOSFET MOSFT 25V 5.8A 24mOhm 5.4 Qg | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 25 V | 5.8 A | 41 mOhms | 5.4 nC | ||||||||
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3,975
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 84A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 84 A | 2.7 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | |||
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1,066
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 800 uOhms | 1.2 V | 85 nC | Enhancement | OptiMOS | |||
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2,967
In-stock
|
Infineon Technologies | MOSFET MOSFT 25V 57A 8.7mOhm 6.8nC LogLvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 57 A | 10.6 mOhms | 1.9 V | 6.8 nC | |||||
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3,349
In-stock
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Infineon Technologies | MOSFET MOSFT 25V 81A 5.7mOhm 10nC Log Lvl | 20 V | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 25 V | 81 A | 8.5 mOhms | 10 nC | |||||||||
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5,598
In-stock
|
Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC | 20 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 9.9 A | 17 mOhms | 1.8 V | 4.3 nC | |||||
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79,600
In-stock
|
Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 1.4mOhms 39nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.4 mOhms | 39 nC |
