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Vds - Drain-Source Breakdown Voltage :
Qg - Gate Charge :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
BSC018N04LS G
1+
$1.480
10+
$1.260
100+
$0.965
500+
$0.853
5000+
$0.597
RFQ
3,468
In-stock
Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 40 V 100 A 1.5 mOhms 1.2 V 150 nC Enhancement OptiMOS
BSC018NE2LSI
1+
$1.260
10+
$1.080
100+
$0.826
500+
$0.730
5000+
$0.511
RFQ
3,935
In-stock
Infineon Technologies MOSFET N-Ch 25V 100A TDSON-8 OptiMOS 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 25 V 100 A 1.5 mOhms 1.2 V 48 nC Enhancement  
BSC019N04LS
1+
$1.490
10+
$1.260
100+
$1.010
500+
$0.883
5000+
$0.656
RFQ
4,992
In-stock
Infineon Technologies MOSFET DIFFERENTIATED MOSFETS 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 40 V 100 A 1.5 mOhms 1.2 V 57 nC Enhancement  
BSC018NE2LSIXT
1+
$1.260
10+
$1.080
100+
$0.826
500+
$0.730
5000+
$0.511
RFQ
4,648
In-stock
Infineon Technologies MOSFET N-Ch 25V 100A TDSON-8 OptiMOS 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 25 V 100 A 1.5 mOhms 1.2 V 48 nC Enhancement OptiMOS
BSC019N04LSATMA1
5000+
$0.656
10000+
$0.630
VIEW
RFQ
Infineon Technologies MOSFET MV POWER MOS 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 40 V 100 A 1.5 mOhms 1.2 V 57 nC Enhancement OptiMOS
BSC018N04LSGXT
5000+
$0.597
10000+
$0.575
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 40 V 100 A 1.5 mOhms 1.2 V 150 nC Enhancement  
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