- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
24 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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25,074
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.3 mOhms | 1.2 V | 85 nC | Enhancement | OptiMOS | |||
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9,800
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1 MOhms | 1.2 V | 133 nC | Enhancement | |||||
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10,490
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1 MOhms | 1.2 V | 133 nC | Enhancement | OptiMOS | ||||
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3,543
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.1 mOhms | 1.2 V | 85 nC | Enhancement | |||||
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3,733
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 900 uOhms | 1.2 V | 122 nC | Enhancement | |||||
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14,101
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.9 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | ||||
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GET PRICE |
6,539
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.2 mOhms | 1.2 V | 77 nC | Enhancement | ||||
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4,507
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.3 mOhms | 1.2 V | 150 nC | Enhancement | OptiMOS | ||||
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11,035
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.5 mOhms | 2 V | 61 nC | Enhancement | OptiMOS | ||||
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5,125
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.9 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | ||||
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3,468
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.5 mOhms | 1.2 V | 150 nC | Enhancement | OptiMOS | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.3 mOhms | 1.2 V | 150 nC | Enhancement | OptiMOS | ||||
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714
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.1 mOhms | 1.2 V | 45 nC | Enhancement | |||||
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GET PRICE |
7,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.3 mOhms | 1.2 V | 85 nC | Enhancement | OptiMOS | |||
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4,933
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.8 mOhms | 1.2 V | 52 nC | Enhancement | |||||
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10,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.8 mOhms | 1.2 V | 52 nC | Enhancement | OptiMOS | ||||
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4,992
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.5 mOhms | 1.2 V | 57 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.2 mOhms | 1.2 V | 77 nC | Enhancement | OptiMOS | ||||
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4,330
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.1 mOhms | 1.2 V | 85 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 900 uOhms | 1.2 V | 122 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.5 mOhms | 1.2 V | 57 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.1 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.5 mOhms | 1.2 V | 150 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.5 mOhms | 2 V | 61 nC | Enhancement |