- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,212
In-stock
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Infineon Technologies | MOSFET LV POWER MOS | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.25 mOhms | 1.2 V | 20 nC | Enhancement | |||
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1,382
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET PWR MOSFET 2.4mOhms | 16 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.2 mOhms | 82 nC | |||||||
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4,489
In-stock
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Infineon Technologies | MOSFET LV POWER MOS | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.25 mOhms | 1.2 V | 20 nC | Enhancement | |||
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917
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 100A 7mOhm 40nC Log LvlAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 100 A | 10 mOhms | 40 nC | |||||||
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411
In-stock
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Infineon Technologies | MOSFET 30V 100A 7 mOhm Auto Lgc Lvl MOSFET | 16 V | Through Hole | TO-220-3 | + 175 C | Tube | Si | N-Channel | 30 V | 100 A | 10 mOhms | 40 nC | |||||||
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3,005
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 4.4mOhms 44nC | 16 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.5 mOhms | 2.5 V | 90 nC |
