Build a global manufacturer and supplier trusted trading platform.
Package / Case :
Number of Channels :
Vds - Drain-Source Breakdown Voltage :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
BSS306NH6327XTSA1
GET PRICE
RFQ
9,635
In-stock
Infineon Technologies MOSFET N-Ch 30V 2.3A SOT-23-3 20 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 2.3 A 57 mOhms 1.2 V 1.5 nC Enhancement
BSS306NH6327XT
GET PRICE
RFQ
9,737
In-stock
Infineon Technologies MOSFET N-Ch 30V 2.3A SOT-23-3 20 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 2.3 A 57 mOhms 1.2 V 1.5 nC Enhancement
BSL806N L6327
GET PRICE
RFQ
1,488
In-stock
Infineon Technologies MOSFET N-Ch 20V 2.3A TSOP-6 8 V SMD/SMT TSOP-6 - 55 C + 150 C Reel 2 Channel Si N-Channel 20 V 2.3 A 57 mOhms   1.7 nC  
Page 1 / 1