- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
479
In-stock
|
Infineon Technologies | MOSFET | 16 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 12.5 A | 300 mOhms | 2.5 V | 16.4 nC | Enhancement | CoolMOS | ||
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GET PRICE |
112,550
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9.3 A | 300 mOhms | 23.3 nC | Enhancement | ||||
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GET PRICE |
535
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.3 A | 300 mOhms | 23.3 nC | Enhancement | ||||
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GET PRICE |
1,011
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 8.8A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.8 A | 300 mOhms | Enhancement | SIPMOS | ||||
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GET PRICE |
37,000
In-stock
|
Infineon Technologies | MOSFET | 16 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 700 V | 12.5 A | 300 mOhms | 2.5 V | 16.4 nC | Enhancement | CoolMOS | ||
|
|
GET PRICE |
25,000
In-stock
|
Infineon Technologies | MOSFET | 16 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 12.5 A | 300 mOhms | 2.5 V | 16.4 nC | Enhancement | CoolMOS | ||
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|
GET PRICE |
2,761
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 300 mOhms | 2.1 V | 31.5 nC | Enhancement | SIPMOS | ||
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|
GET PRICE |
2,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 300 mOhms | 2.1 V | 31.5 nC | Enhancement | OptiMOS |
