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Package / Case :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
BSC22DN20NS3 G
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7,730
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Infineon Technologies MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 200 V 7 A 194 mOhms 2 V 5.6 nC Enhancement OptiMOS
BSC22DN20NS3GATMA1
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RFQ
3,450
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Infineon Technologies MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 200 V 7 A 194 mOhms 2 V 5.6 nC Enhancement OptiMOS
BSZ22DN20NS3 G
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RFQ
9,920
In-stock
Infineon Technologies MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 20 V SMD/SMT TSDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 200 V 7 A 194 mOhms 2 V 5.6 nC Enhancement  
BSZ22DN20NS3GATMA1
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RFQ
Infineon Technologies MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 20 V SMD/SMT TSDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 200 V 7 A 194 mOhms 2 V 5.6 nC Enhancement OptiMOS
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