- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,996
In-stock
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Infineon Technologies | MOSFET 30V Fet 25A 4.7mOhm 20nC PQFN3 BTRY | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 5.2 mOhms | 1.7 V | 29 nC | |||||
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5,272
In-stock
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Infineon Technologies | MOSFET MOSFET, 30V, 25A, 4 3nC Qg, PQFN 3.3x3.3 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 6.8 mOhms | 1.7 V | 26 nC | Enhancement | ||||
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33,000
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 30 V | 125 W | 1.9 mOhms | 1.7 V | 40 nC | Enhancement | |||||
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109
In-stock
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Infineon Technologies | MOSFET 30V 179A 2.2 mOhm 36 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 179 A | 2.2 mOhms | 1.7 V | 36 nC | |||||
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4,800
In-stock
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Infineon Technologies | MOSFET MOSF N CH 30V 34A DIRECTFET MT | 20 V | SMD/SMT | DirectFET-MT | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 192 A | 1.9 mOhms | 1.7 V | 51 nC | Directfet |
