- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- 10 A (1)
- 10.3 A (1)
- 100 A (2)
- 11 A (6)
- 11.6 A (1)
- 112 A (1)
- 12 A (4)
- 13 A (5)
- 15 A (2)
- 16 A (1)
- 17 A (3)
- 18 A (10)
- 20.7 A (1)
- 21 A (1)
- 22 A (2)
- 23.8 A (1)
- 24 A (6)
- 33 A (5)
- 35 A (1)
- 4 A (2)
- 4.4 A (1)
- 4.5 A (1)
- 46 A (4)
- 5 A (1)
- 50 A (1)
- 51 A (1)
- 6.1 A (1)
- 6.2 A (1)
- 7 A (2)
- 75 A (5)
- 76 A (2)
- 8 A (2)
- 9 A (3)
- 9.9 A (1)
- Rds On - Drain-Source Resistance :
-
- 0.03 Ohms (2)
- 0.145 Ohms (4)
- 0.3 Ohms (2)
- 0.305 Ohms (1)
- 1.4 Ohms (2)
- 111 mOhms (4)
- 13.5 mOhms (1)
- 155 mOhms (1)
- 160 mOhms (1)
- 168 mOhms (6)
- 17 mOhms (5)
- 170 mOhms (1)
- 180 mOhms (1)
- 190 mOhms (2)
- 199 mOhms (4)
- 280 mOhms (3)
- 299 mOhms (1)
- 34 mOhms (1)
- 350 mOhms (1)
- 380 mOhms (4)
- 4.8 mOhms (1)
- 40 mOhms (6)
- 400 mOhms (1)
- 450 mOhms (2)
- 5.9 mOhms (1)
- 52 mOhms (1)
- 58 mOhms (7)
- 650 mOhms (1)
- 7.6 mOhms (1)
- 750 mOhms (1)
- 800 mOhms (1)
- 84 mOhms (8)
- 85 mOhms (2)
- 850 mOhms (1)
- 860 mOhms (1)
- Qg - Gate Charge :
-
- 10 nC (2)
- 107 nC (1)
- 12.4 nC (1)
- 121 nC (2)
- 13 nC (4)
- 137 nC (1)
- 15 nC (1)
- 15.3 nC (1)
- 150 nC (1)
- 19 nC (2)
- 20 nC (4)
- 215 nC (4)
- 23 nC (7)
- 24 nC (5)
- 24.8 nC (1)
- 25 nC (4)
- 32 nC (1)
- 34 nC (1)
- 35 nC (4)
- 36 nC (2)
- 42 nC (2)
- 45 nC (10)
- 49 nC (1)
- 61 nC (1)
- 64 nC (7)
- 66 nC (1)
- 68 nC (1)
- 75 nC (1)
- 76 nC (1)
- 87 nC (1)
- 93 nC (6)
- 95 nC (1)
- Tradename :
82 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
868
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
|
|
1,000
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11 A | 450 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | ||||
|
|
671
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
|
|
435
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
|
|
488
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
|
|
387
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11 A | 450 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | ||||
|
|
450
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 9 A | 0.3 Ohms | 3 V | 13 nC | Enhancement | CoolMOS | ||||
|
|
435
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 18 A | 0.145 Ohms | 3 V | 25 nC | Enhancement | CoolMOS | ||||
|
|
11,151
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 20.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.7 A | 190 mOhms | 3 V | 87 nC | CoolMOS | ||||
|
|
316
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | |||
|
|
236
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 75A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | |||
|
|
528
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | |||
|
|
756
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 75 A | 17 mOhms | 3 V | 150 nC | Enhancement | ||||
|
|
395
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 46A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | |||
|
|
327
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 35 A | 52 mOhms | 3 V | 68 nC | Enhancement | CoolMOS | |||
|
|
102
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 75A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | |||
|
|
1,469
In-stock
|
Infineon Technologies | MOSFET N-Ch 560V 21A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 190 mOhms | 3 V | 95 nC | CoolMOS | ||||
|
|
225
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 76 A | 0.03 Ohms | 3 V | 121 nC | Enhancement | CoolMOS | ||||
|
|
187
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 50 A | 34 mOhms | 3 V | 107 nC | Enhancement | CoolMOS | |||
|
|
2,341
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 12 A | 170 mOhms | 3 V | 15.3 nC | Enhancement | StrongIRFET | |||
|
|
707
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 155 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | |||
|
|
571
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 23.8A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 160 mOhms | 3 V | 75 nC | CoolMOS | ||||
|
|
235
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
|
|
92
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 46A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | |||
|
|
503
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 100 A | 4.8 mOhms | 3 V | 137 nC | OptiMOS | ||||
|
|
427
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 85 mOhms | 3 V | 42 nC | Enhancement | CoolMOS | |||
|
|
5,210
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 45 nC | CoolMOS | ||||
|
|
395
In-stock
|
Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 12 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | |||
|
|
147
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 11A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | 3 V | 45 nC | CoolMOS | ||||
|
|
473
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 100 A | 7.6 mOhms | 3 V | 76 nC | OptiMOS |
