- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
19 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,813
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -30A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 69 mOhms | - 4 V | 48 nC | Enhancement | SIPMOS | |||
|
|
2,874
In-stock
|
Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 160 mOhms | - 4 V | 48 nC | Enhancement | SIPMOS | |||
|
|
3,930
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 63A 14mOhm 34nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 14 mOhms | 2.5 V | 48 nC | |||||||
|
|
3,935
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | ||||
|
|
4,071
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | ||||
|
|
2,470
In-stock
|
Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 160 mOhms | - 4 V | 48 nC | Enhancement | ||||
|
|
2,997
In-stock
|
Infineon Technologies | MOSFET MOSFT 20V 100A 4.0mOhm 2.5V dr cpbl | 12 V | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 20 V | 100 A | 4 mOhms | 48 nC | |||||||||
|
|
2,219
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -30A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 69 mOhms | - 4 V | 48 nC | Enhancement | ||||
|
|
1,969
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 53A 16.5mOhm 48nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 53 A | 16.5 mOhms | 48 nC | ||||||||
|
|
868
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 46A 16.5mOhm 48nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 46 A | 16.5 mOhms | 48 nC | ||||||||
|
|
756
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 70 A | 3.6 mOhms | 1 V | 48 nC | Enhancement | OptiMOS | |||
|
|
1,078
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 44mOhms 48nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 32 A | 44 mOhms | 48 nC | Enhancement | |||||
|
|
276
In-stock
|
Infineon Technologies | MOSFET N-Ch 500V 23A TO220-3 | 3.5 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 23 A | 140 mOhms | 48 nC | CoolMOS | |||||
|
|
VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 87 A | 9.2 mOhms | 48 nC | Enhancement | ||||||
|
|
4,648
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | OptiMOS | |||
|
|
VIEW | Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 12.4 mOhms | 48 nC | Enhancement | |||||
|
|
VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 9.2 mOhms | 48 nC | Enhancement | ||||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | OptiMOS | |||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 70 A | 3.6 mOhms | 1 V | 48 nC | Enhancement |