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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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78
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Infineon Technologies | MOSFET MOSFT 40V 350A 1.7mOhm 220nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 350 A | 1.35 mOhms | 220 nC | |||||||
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311
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Infineon Technologies | MOSFET MOSFT 75V 105A 7mOhm 150nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 4 V | 220 nC | ||||||
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172
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 1.7mOhms | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 350 A | 1.7 mOhms | 220 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 1mOhm 220nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 700 Ohms | 220 nC | Enhancement | Directfet | ||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1mOhm | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 1 MOhms | 220 nC | Enhancement |
