- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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492
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 6.6A TO220FP CoolMOS CFD | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 6.6 A | 700 mOhms | Enhancement | CoolMOS | |||||
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3,361
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6.6 A | 2.22 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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9,990
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 4.3A DPAK-2 CoolMOS CE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6.6 A | 860 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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866
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 4.3A DPAK-2 CoolMOS CE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6.6 A | 860 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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80
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 12.8A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6.6 A | 860 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS |
