- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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589
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 43A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 5.9 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | ||||
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892
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 42mOhms 133.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 42 mOhms | 133.3 nC | Enhancement | ||||||
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5,400
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 43A 42mOhm 144.4nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 42 mOhms | 133.3 nC | |||||||||
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2,290
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.8mOhms 7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 43 A | 13.8 mOhms | 2.25 V | 7 nC | Enhancement | |||||
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422
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 43 A | 15.5 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | ||||
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914
In-stock
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Infineon Technologies | MOSFET 60V SINGLE N-CH 15.8mOhms 22nC | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | |||||||||
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723
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 43 A | 15.5 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | ||||
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1,414
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.8mOhms 7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 43 A | 18.2 mOhms | 7 nC | Enhancement | ||||||
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167
In-stock
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Infineon Technologies | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 42 mOhms | 133.3 nC | Enhancement | |||||||
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504
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 43A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 9.3 mOhms | 36 nC | Enhancement | OptiMOS | |||||
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184
In-stock
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Infineon Technologies | MOSFET 60V SINGLE N-CH 15.8mOhms 22nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 12.6 mOhms | 22 nC | |||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 43 A | 15.8 mOhms | 4 V | 22 nC | Enhancement | |||||
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498
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 43A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 5.9 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 15.8 mOhms | 22 nC |