- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,643
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 36 A | 27 mOhms | 2 V | 22 nC | Enhancement | OptiMOS | ||||
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1,371
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 36A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 36 A | 100 mOhms | 2.5 V | 270 nC | Enhancement | CoolMOS | ||||
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2,517
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 36 A | 27 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | ||||
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2,988
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 36A 16mOhm 59.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 36 A | 16 mOhms | 59.3 nC | |||||||||
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3,200
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement | ||||||
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473
In-stock
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Infineon Technologies | MOSFET N-Ch 49V 36A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 49 V | 36 A | 6.5 mOhms | 1.6 V | 155 nC | Enhancement | |||||
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1,810
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 36 A | 40 mOhms | 32 nC | Enhancement | ||||||
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963
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 36A 44mOhm 49.3nC LogLvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 36 A | 63 mOhms | 49.3 nC | |||||||||
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520
In-stock
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Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement | |||||||
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2,214
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 36A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 34 V | 36 A | 12 mOhms | 6.1 nC | OptiMOS | ||||||
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3,000
In-stock
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Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement | |||||||
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25,300
In-stock
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Infineon Technologies | MOSFET MOSFT 36A 49.3nC 44mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 44 mOhms | 2 V | 49.3 nC | ||||||
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1,738
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 36A 26.5mOhm 42nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | |||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 900V 36A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 36 A | 100 mOhms | 2.5 V | 270 nC | Enhancement | CoolMOS |