- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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8,510
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 99 A | 6.8 mOhms | 2.5 V | 33 nC | Enhancement | |||
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694
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 99A 6.8mOhm 33nC Log Lvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 99 A | 8.3 mOhms | 33 nC | |||||||
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593
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 105A 11.8mOhm 73nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 99 A | 10.3 mOhms | 73 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 99 A | 8.3 mOhms | 33 nC |
