- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,920
In-stock
|
Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 190 mOhms | 6.9 nC | Enhancement | ||||||
|
|
4,809
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 150 mOhms | 4 V | 6.9 nC | Enhancement | ||||
|
|
875
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 8.7A D2PAK-2 CoolMOS CFD2 | 30 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | ||||||
|
|
660
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 8.7 A | 190 mOhms | 6.9 nC | Enhancement | |||||
|
|
475
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 8.7A TO220-3 CoolMOS CFD2 | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | ||||||
|
|
316
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 8.7A TO220FP CoolMOS CFD2 | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | ||||||
|
|
176
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 8.7A TO247-3 CoolMOS CFD2 | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS |
