- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Packaging :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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45,200
In-stock
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Infineon Technologies | MOSFET MOSFET_(20V 40V) | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 167 W | N-Channel | 40 V | 200 A | 900 uOhms | 2.8 V | 99 nC | HSOF-5 | 2000 | Green available | ||||||||||
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1,610
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 200 A | 2.4 mOhms | 120 nC | ||||||||||||
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2,457
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 1.5mOhms 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 1.1 mOhms | 200 nC | Enhancement | Directfet | ||||||||
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752
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 200A 3mOhm 75nC Log LvlAB | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 200 A | 4 mOhms | 75 nC | ||||||||||||
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289
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 200A 3.1mOhm 75nC LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 200 A | 5 mOhms | 75 nC | ||||||||||||
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402
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 3.1mOhms 75nC | 16 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 200 A | 5 mOhms | 75 nC |
