- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,815
In-stock
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Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 29mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 38 A | 24 mOhms | 4 V | 37 nC | Enhancement | ||||
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437
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 115A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | |||
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265
In-stock
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Infineon Technologies | MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 56 mOhms | 5 V | 125 nC | Enhancement | ||||
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340
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 38A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | |||
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349
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 38A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | |||
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10,800
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 38A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | |||
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217
In-stock
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Infineon Technologies | MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-247AC | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 69 mOhms | 5 V | 125 nC | Enhancement | |||||
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152
In-stock
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Infineon Technologies | MOSFET Auto Q101 300V SGL N-CH HEXFET | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 56 mOhms | 5 V | 83 nC | |||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 115A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | |||
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240
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 38A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 115A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 115A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS |
