- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Tradename :
40 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
868
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | |||||
|
671
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | |||||
|
500
In-stock
|
Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 17 A | 129 mOhms | 3 V | 23 nC | Enhancement | |||||
|
281
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-247-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | |||||
|
27,370
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 117 nC | Enhancement | CoolMOS | ||||
|
6,474
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17 A | 4.2 mOhms | Enhancement | OptiMOS | ||||||
|
3,113
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 17A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 17 A | 85 mOhms | 2 V | 19 nC | Enhancement | |||||
|
2,462
In-stock
|
Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 70mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 70 mOhms | 13.3 nC | |||||||||
|
876
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 117 nC | Enhancement | CoolMOS | ||||
|
2,826
In-stock
|
Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 105 mOhms | 2 V | 34 nC | Enhancement | |||||
|
2,875
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 17A 90mOhm 24.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 17 A | 90 mOhms | 24.7 nC | |||||||||
|
1,762
In-stock
|
Infineon Technologies | MOSFET MOSFT 17A 22.7nC 100mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 17 A | 150 mOhms | 22.7 nC | |||||||||
|
20,950
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 17A 90mOhm 24.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 90 mOhms | 4 V | 37 nC | ||||||
|
1,663
In-stock
|
Infineon Technologies | MOSFET MOSFT 150V 17A 95mOhm 13nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 17 A | 80 mOhms | 4.9 V | 13 nC | ||||||
|
2,254
In-stock
|
Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 17 A | 155 mOhms | 22.7 nC | |||||||||
|
740
In-stock
|
Infineon Technologies | MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 17 A | 180 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | ||||
|
1,643
In-stock
|
Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 65mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 65 mOhms | 10 nC | Enhancement | |||||||
|
512
In-stock
|
Infineon Technologies | MOSFET N-Ch 500V 17A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 17 A | 199 mOhms | 34 nC | Enhancement | CoolMOS | |||||
|
1,442
In-stock
|
Infineon Technologies | MOSFET 25V SINGLE N-CH 20V VGS HEXFET | 20 V | SMD/SMT | DirectFET-SQ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 17 A | 6.7 mOhms | 1.9 V | 12 nC | Directfet | |||||
|
1,955
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 17 A | 110 mOhms | 10 nC | Enhancement | ||||||
|
1,832
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 110 mOhms | 2 V | 10 nC | Enhancement | |||||
|
13,330
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 17A 70mOhm 13.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 70 mOhms | 13.3 nC | |||||||||
|
503
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 17A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 17 A | 85 mOhms | 2 V | 19 nC | Enhancement | |||||
|
263
In-stock
|
Infineon Technologies | MOSFET N-Ch 500V 17A TO247-3 CoolMOS CP | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 17 A | 199 mOhms | Enhancement | CoolMOS | ||||||
|
907
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 17A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 17 A | 85 mOhms | 2 V | 19 nC | Enhancement | |||||
|
2,583
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 17A 65mOhm 10nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 17 A | 110 mOhms | 10 nC | |||||||||
|
6
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 17A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 117 nC | Enhancement | CoolMOS | ||||
|
8,540
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 17A 65mOhm 10nC Log Lvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 110 mOhms | 10 nC | |||||||||
|
9,010
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 17A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 117 nC | Enhancement | CoolMOS | ||||
|
GET PRICE |
50,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 17A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 250 mOhms | 2.1 V | 177 nC | Enhancement | CoolMOS |