- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,461
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 113.3 nC | |||||||||
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1,492
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 110A 6.5mOhm 76nC Qg | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 4 V | 76 nC | ||||||
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799
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 110A D2PAK | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 5.1 mOhms | 3.7 V | 88 nC | StrongIRFET | |||||
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1,060
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 110A D2PAK | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.2 mOhms | 3.7 V | 88 nC | StrongIRFET | |||||
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797
In-stock
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Infineon Technologies | MOSFET 60V Single N-Channel HEXFET Power | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 5.1 mOhms | 3.7 V | 130 nC | Enhancement | StrongIRFET | ||||||
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322
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 97.3nC | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 97.3 nC | Enhancement | ||||||
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416
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 110A TO-220AB | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.2 mOhms | 3.7 V | 88 nC | StrongIRFET | |||||
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GET PRICE |
468,200
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 110A 8mOhm 97.3nC | Through Hole | TO-220 | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 97.3 nC | ||||||||
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166
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 110A 6.5mOhm 76nC Qg | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 76 nC | |||||||||
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GET PRICE |
8,000
In-stock
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Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.8 mOhms | 3.7 V | 86 nC | StrongIRFET | ||||
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VIEW | Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 97.3nC | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 2 V to 4 V | 97.3 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 76 nC | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 110 A | 8.5 mOhms | 29 nC | |||||||||
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VIEW | Infineon Technologies | MOSFET MOSFT 20V 110A 6.5mOhm 29nC | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 110 A | 8.5 mOhms | 29 nC |