- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,877
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3 | SMD/SMT | TDSON-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 10.9 mOhms | OptiMOS | ||||||||||
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7,033
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 63A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 63 A | 4.5 mOhms | 13 nC | OptiMOS | ||||||
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3,930
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 63A 14mOhm 34nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 14 mOhms | 2.5 V | 48 nC | ||||||||
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1,319
In-stock
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Infineon Technologies | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 2.5 V | 34 nC | Enhancement | |||||
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287
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 63A 14mOhm 34nC Log Lvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | |||||||||
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638
In-stock
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Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | |||||||||
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6,000
In-stock
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Infineon Technologies | MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 13.9 mOhms | 3 V | 54 nC | Enhancement | StrongIRFET | |||||||
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VIEW | Infineon Technologies | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 14 mOhms | 2.5 V | 34 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | |||||||||
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VIEW | Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 12.4 mOhms | 48 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC |