- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,464
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 1.9A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 1.9 A | 2.8 Ohms | 3 V | 12 nC | CoolMOS | ||||
|
|
2,021
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 160mOhms 7nC | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 1.9 A | 160 mOhms | 7 nC | Enhancement | |||||
|
|
1,470
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 1.9A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1.9 A | 2.4 Ohms | 2.1 V | 12 nC | Enhancement | CoolMOS |
