- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,226
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 62A 9mOhm 8nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 62 A | 8.7 mOhms | 1.8 V | 7.6 nC | |||||
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614
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 26mOhms | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | |||||
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81,700
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 62A 26mOhm 70nC Qg | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | |||||
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707
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 62 A | 11 mOhms | 4 V | 40 nC | Enhancement | ||||
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1,544
In-stock
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Infineon Technologies | MOSFET 100V 10.7mOhm 62A HEXFET 140W 50nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 62 A | 10.7 mOhms | 4 V | 58 nC | Enhancement | StrongIRFET | |||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 62 A | 11 mOhms | 40 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 62 A | 11 mOhms | 4 V | 40 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 62 A | 11 mOhms | 40 nC | Enhancement |