- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,092
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | - 16 V, + 5 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 3.7 mOhms | - 2 V | 160 nC | Enhancement | OptiMOS | |||
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4,574
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 3.7 mOhms | 2.3 V | 69 nC | Enhancement | OptiMOS | |||
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14,970
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 78A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 78 A | 3.7 mOhms | 17 nC | OptiMOS | |||||
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3,132
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.7 mOhms | Enhancement | OptiMOS | |||||
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4,862
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 3.7 mOhms | 2.3 V | 69 nC | Enhancement | OptiMOS | |||
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GET PRICE |
53,100
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 168A 4.6mOhm 152nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.7 mOhms | 150 nC | |||||||
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790
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 3.7 mOhms | 4 V | 100 nC | Enhancement | ||||
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1,686
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 3.7 mOhms | - 4 V | 151 nC | Enhancement | OptiMOS | |||
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25,000
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3 | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 3.7 mOhms | 2 V | 73 nC | Enhancement | OptiMOS | |||
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1,100
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 3.7 mOhms | 100 nC | Enhancement | ||||||
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627
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | - 16 V, + 5 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 3.7 mOhms | - 2 V | 160 nC | Enhancement | ||||
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249
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 3.7 mOhms | 100 nC | Enhancement | ||||||
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155
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 206A 3.7mOhm 160nC | 20 V | Through Hole | TO-273-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 206 A | 3.7 mOhms | 160 nC | ||||||||
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161
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 75A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 75 A | 3.7 mOhms | 29 nC | Enhancement | OptiMOS | ||||
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58
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 180A 4.5mOhm 150nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.7 mOhms | 150 nC | ||||||||
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152
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 3.7mOhms 100nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 190 A | 3.7 mOhms | 100 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 90A D2PAK-2 | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.7 mOhms | |||||||||||
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VIEW | Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 3.7 mOhms | - 4 V | 151 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3 | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 3.7 mOhms | 2 V | 73 nC | Enhancement | OptiMOS | |||
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575
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.7 mOhms | 99 nC | OptiMOS | |||||
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1,410
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.7 mOhms | 1.2 V | 110 nC | Enhancement | OptiMOS | |||
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490
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS-T2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.7 mOhms | OptiMOS | |||||||||
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1,989
In-stock
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Infineon Technologies | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 120 A | 3.7 mOhms | 3 V | 100 nC | Enhancement | OptiMOS |
