- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
30 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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471
In-stock
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Infineon Technologies | MOSFET N-Ch 560V 32A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 32 A | 110 mOhms | Enhancement | CoolMOS | ||||||
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1,020
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 30A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 110 mOhms | 2.5 V | 96 nC | Enhancement | CoolMOS | ||||
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666
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 30A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 110 mOhms | 2.5 V | 96 nC | Enhancement | CoolMOS | ||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 25A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | ||||
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1,153
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | ||||
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500
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 25A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | ||||
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3,007
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 110mOhms 21.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | |||||
|
404
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 31.2A TO220-3 CoolMOS CFD2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 110 mOhms | 118 nC | CoolMOS | ||||||
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1,809
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -2.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.9 A | 110 mOhms | - 4 V | 33 nC | Enhancement | |||||
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7,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 25A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | ||||
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510
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 72A 14mOhm 110nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 72 A | 110 mOhms | 110 nC | |||||||||
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3,560
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -3.44A DSO-8 | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3.44 A | 110 mOhms | - 4 V | 30 nC | Enhancement | SIPMOS | ||||
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6,700
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.7 A | 110 mOhms | - 1.2 V | - 1.3 nC | Enhancement | |||||
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442
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 25A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | ||||
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48,000
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 31.2A TO220FP CoolMOS CFD2 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 110 mOhms | 118 nC | CoolMOS | ||||||
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494
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 25A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | ||||
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232
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31.2A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 110 mOhms | CoolMOS | ||||||||||
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468
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 30A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 110 mOhms | 2.5 V | 96 nC | Enhancement | CoolMOS | ||||
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1,955
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 17 A | 110 mOhms | 10 nC | Enhancement | ||||||
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1,832
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 110 mOhms | 2 V | 10 nC | Enhancement | |||||
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2,242
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 110mOhms 21.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | 21.3 nC | Enhancement | ||||||
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1,176
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -2.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.9 A | 110 mOhms | - 4 V | 33 nC | Enhancement | |||||
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546
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 11A 110mOhm 29.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 11 A | 110 mOhms | 29.3 nC | |||||||||
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2,583
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 17A 65mOhm 10nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 17 A | 110 mOhms | 10 nC | |||||||||
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138
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 30A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 110 mOhms | 2.5 V | 96 nC | Enhancement | CoolMOS | ||||
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404
In-stock
|
Infineon Technologies | MOSFET MOSFT P-Ch -55V -18A 110mOhm 21.3nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | 21.3 nC | |||||||||
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8,540
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 17A 65mOhm 10nC Log Lvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 110 mOhms | 10 nC | |||||||||
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2,215
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -3.44A DSO-8 | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3.44 A | 110 mOhms | - 4 V | 30 nC | Enhancement | |||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | ||||
|
7,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 25A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS |