- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,466
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 60 A | 13.5 mOhms | 3 V | 23 nC | Enhancement | |||||
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2,534
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 13.5 mOhms | OptiMOS | |||||||||||
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2,462
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 39.6 A | 13.5 mOhms | - 3.1 V | 30 nC | Enhancement | OptiMOS | ||||
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2,339
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 39.6 A | 13.5 mOhms | - 3.1 V | 30 nC | Enhancement | OptiMOS | ||||
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2,909
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 13.5 mOhms | 7.1 nC | |||||||||
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679
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.5 mOhms | 3 V | 24 nC | ||||||
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242
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 60A 13.5mOhm 23nC LogLvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 60 A | 13.5 mOhms | 3 V | 35 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 39.6 A | 13.5 mOhms | - 3.1 V | 30 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 39.6 A | 13.5 mOhms | - 3.1 V | 30 nC | Enhancement | |||||
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307
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | GaN | N-Channel | 30 V | 30 A | 13.5 mOhms | Enhancement | OptiMOS | ||||||
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159
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 50A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 50 A | 13.5 mOhms | Enhancement | OptiMOS |