- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Tradename :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
50,000
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | ||
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4,625
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | |||
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50,000
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | |||
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2,988
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 36A 16mOhm 59.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 36 A | 16 mOhms | 59.3 nC | ||||||||
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2,247
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 16mOhms 59.3nC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 16 mOhms | 4 V | 89 nC | Enhancement | ||||
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1,319
In-stock
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Infineon Technologies | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 2.5 V | 34 nC | Enhancement | ||||
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833
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | |||
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46,200
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | ||||
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287
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 63A 14mOhm 34nC Log Lvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | ||||||||
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1,400
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 16mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | |||||
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638
In-stock
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Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | ||||||||
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23
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 56A 16mOhm 70nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | ||||||||
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319
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 70A D2PAK-2 SIPMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 16 mOhms | Enhancement | SIPMOS | |||||
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4,000
In-stock
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Infineon Technologies | MOSFET 55V N-CH HEXFET 16mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | |||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 53A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 53 A | 16 mOhms | OptiMOS | |||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 3.1 A | 16 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 70A TO220-3 SIPMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 70 A | 16 mOhms | Enhancement | SIPMOS | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 53 A | 16 mOhms | 50 nC | Enhancement | ||||||
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60,000
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS |
