- Package / Case :
- Minimum Operating Temperature :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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614
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 26mOhms | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | |||||
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81,700
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 62A 26mOhm 70nC Qg | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | |||||
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477
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 26mOhms 74nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 4 V | 74 nC | Enhancement | ||||
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24
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26mOhms 54nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 55 A | 26 mOhms | 93.3 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 47 A | 26 mOhms | Enhancement | SIPMOS | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC |
