- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,881
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | StrongIRFET | ||||||
|
|
GET PRICE |
159,300
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | ||||||
|
|
27,770
In-stock
|
Infineon Technologies | MOSFET MOSFT P-Ch -55V -11A 175mOhm 12.7nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | |||||||
|
|
1,013
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 49A 17.5mOhm 42nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 49 A | 175 mOhms | 42 nC | |||||||
|
|
973
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 12 A | 175 mOhms | 12.7 nC | |||||||
|
|
1,597
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -55V 11A 175mOhm 12.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | - 4 V | 19 nC |
