- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Qg - Gate Charge :
- Tradename :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
28,010
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 56A 18mOhm 69nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 56 A | 18 mOhms | 4 V | 100 nC | ||||||
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4,312
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 8.3A 18mOhm 28nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 18 mOhms | 28 nC | ||||||||
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992
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 19A D2PAK-4 | 20 V | SMD/SMT | TO-263-5 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 19 A | 18 mOhms | 1.6 V | 60 nC | Enhancement | ||||
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3,852
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 56 A | 18 mOhms | 69 nC | Enhancement | |||||
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4,739
In-stock
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Infineon Technologies | MOSFET 30V SGL P-CH HEXFET Pwr MOSFET | 25 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 18 mOhms | - 1.8 V | 16 nC | SmallPowIR | ||||
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1,199
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 28A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 28 A | 18 mOhms | 7 nC | Enhancement | OptiMOS | ||||
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90,700
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 59A 18mOhm 82nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | ||||||||
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236
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 89A 10mOhm 65.3nC LogLvl | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 89 A | 18 mOhms | 2 V | 98 nC | |||||
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523
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 47A 10mOhm 65.3nC LogLvl | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 47 A | 18 mOhms | 65.3 nC | ||||||||
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1,631
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 3.7A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.7 A | 18 mOhms | 1.2 V | 6.6 nC | Enhancement | ||||
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81
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 3.7A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.7 A | 18 mOhms | 1.2 V | 6.6 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 18mOhms 24nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 46 A | 18 mOhms | 24 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 56 A | 18 mOhms | 69 nC | Enhancement | ||||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 30A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 18 mOhms | 1.2 V | 21 nC | Enhancement | ||||
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307
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 30A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 18 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS |
