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Minimum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPAW60R190CEXKSA1
1+
$1.700
10+
$1.450
100+
$1.160
500+
$1.010
RFQ
398
In-stock
Infineon Technologies MOSFET CONSUMER 20 V Through Hole TO-220FP-3 - 40 C + 150 C Tube 1 Channel Si N-Channel 600 V 26.7 A 440 mOhms 2.5 V 63 nC Enhancement CoolMOS
SPA11N60CFD
1+
$2.760
10+
$2.350
100+
$2.040
250+
$1.930
RFQ
480
In-stock
Infineon Technologies MOSFET N-Ch 600V 11A TO220FP CoolMOS CFD 20 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 11 A 440 mOhms     Enhancement CoolMOS
SPW11N60CFD
1+
$3.480
10+
$2.960
100+
$2.560
250+
$2.430
RFQ
300
In-stock
Infineon Technologies MOSFET N-Ch 650V 11A TO247-3 CoolMOS CFD 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 11 A 440 mOhms     Enhancement CoolMOS
SPP11N60CFDXKSA1
500+
$1.730
1000+
$1.460
2500+
$1.390
5000+
$1.340
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 650V 11A TO220-3   Through Hole TO-220-3     Tube 1 Channel Si N-Channel 650 V 11 A 440 mOhms       CoolMOS
SPP11N60CFD
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 650V 11A TO220-3 CoolMOS CFD 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 11 A 440 mOhms     Enhancement CoolMOS
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