- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,304
In-stock
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Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 28 A | 62 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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16,416
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -2A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 62 mOhms | - 2 V | - 5 nC | Enhancement | ||||
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2,080
In-stock
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Infineon Technologies | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-SB | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 62 mOhms | 4 V | 8.3 nC | Enhancement | ||||
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2,959
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -2A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 62 mOhms | - 2 V | - 5 nC | Enhancement | ||||
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3,028
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -2A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 62 mOhms | - 2 V | - 5 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 28 A | 62 mOhms | 3 V | 64 nC | Enhancement | CoolMOS |
