- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Qg - Gate Charge :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,808
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 155 A | 5 mOhms | 2 V | 92 nC | Enhancement | OptiMOS | ||||
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452
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 155 A | 5 mOhms | 2 V | 92 nC | Enhancement | OptiMOS | ||||
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2,194
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 70 A | 5 mOhms | - 2 V | 91 nC | Enhancement | |||||
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651
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 174A 5mOhm 170nC | 20 V | Through Hole | TO-273-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 174 A | 5 mOhms | 170 nC | |||||||||
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3,188
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 80A TDSON-8 OptiMOS 3M | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 5 mOhms | Enhancement | OptiMOS | ||||||
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4,000
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 5 mOhms | 1.2 V | 12 nC | Enhancement | OptiMOS | ||||
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1,200
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 5 mOhms | 1.2 V | 12 nC | Enhancement | OptiMOS | ||||
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602
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 100 A | 5 mOhms | 1.2 V | 246 nC | Enhancement | OptiMOS | ||||
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289
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 200A 3.1mOhm 75nC LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 200 A | 5 mOhms | 75 nC | |||||||||
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402
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 3.1mOhms 75nC | 16 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 200 A | 5 mOhms | 75 nC | |||||||||
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290
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 130A 6.3mOhm 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 5 mOhms | 4 V | 120 nC | ||||||
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GET PRICE |
12,620
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 5 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 75V 100A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 100 A | 5 mOhms | 1.2 V | 246 nC | Enhancement | |||||
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2,860
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 60A CanPAK-2 SQ | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 5 mOhms | 25 nC | OptiMOS | ||||||
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752
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 5 mOhms | Enhancement | OptiMOS | ||||||
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7
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 5 mOhms | 1.2 V | 75 nC | Enhancement | OptiMOS |