- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,825
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 9.7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 9.7 A | 200 mOhms | - 2 V | 21 nC | Enhancement | SIPMOS | |||
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19,920
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 9.7A 200mOhm 16.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 9.7 A | 200 mOhms | 16.7 nC | ||||||||
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1,958
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 9.5A 200mOhm 16.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 9.5 A | 200 mOhms | 16.7 nC | ||||||||
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4,774
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -2.3A 200mOhm 5.8nC LogLvl | 12 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.3 A | 200 mOhms | 5.8 nC | ||||||||
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1,420
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET PWR MOSFET200mOhms | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 200 mOhms | 4 V | 17 nC | Enhancement | ||||
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1,159
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 200mOhms 38.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 14 A | 200 mOhms | 38.7 nC | Enhancement | |||||
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63,700
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 100 V | - 14 A | 200 mOhms | 38.7 nC | ||||||||
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1,306
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 3.2A 100mOhm 6.4nC LogLvl | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 3.2 A | 200 mOhms | 6.4 nC | ||||||||
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536
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -15A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 200 mOhms | 47 nC | Enhancement | SIPMOS | ||||
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2,249
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 9.7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 9.7 A | 200 mOhms | - 2 V | 21 nC | Enhancement | ||||
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896
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 14.5A I2PAK-3 | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 14.5 A | 200 mOhms | OptiMOS | ||||||||||
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48
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 14.5A D2PAK-2 | 20 V | SMD/SMT | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 14.5 A | 200 mOhms | OptiMOS |
