- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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24,558
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 98 A | 6.6 mOhms | 2 V | 88 nC | Enhancement | OptiMOS | |||
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4,800
In-stock
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Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7mOhms | 16 V | SMD/SMT | DirectFET-SC | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 58 A | 6.6 mOhms | 2.5 V | 22 nC | |||||
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8,800
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 98 A | 6.6 mOhms | 2 V | 88 nC | Enhancement | OptiMOS | |||
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1,309
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 80A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.6 mOhms | 2.2 V | 42 nC | Enhancement | ||||
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1,578
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 75 V | 68 A | 6.6 mOhms | 3.7 V | 110 nC | Enhancement | StrongIRFET |
