- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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738
In-stock
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Infineon Technologies | MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | |||
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2,943
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -30V -4.6A 70mOhm 27nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.6 A | 130 mOhms | - 3 V | 27 nC | |||||
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528
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 23A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | |||
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3,384
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 70mOhms 27nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 4.6 A | 130 mOhms | 27 nC | Enhancement | |||||
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664
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -18.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 18.7 A | 130 mOhms | - 21 nC | SIPMOS | |||||
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488
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 23A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS |
