- Vgs - Gate-Source Voltage :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
2,450
In-stock
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Infineon Technologies | MOSFET SILICON CARBIDE MOSFET | - 5 V, + 23 V | Tube | 1 Channel | 133 W | N-Channel | 650 V | 35 A | 74 mOhms | 5.7 V | 28 nC | TO-247 | 30 | Green available | |||||||||
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7,129
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 13 A | 74 mOhms | 2 V | 7 nC | Enhancement | OptiMOS | |||||||
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4,919
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 13 A | 74 mOhms | 2 V | 7 nC | Enhancement | OptiMOS |
