- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
457
In-stock
|
Infineon Technologies | MOSFET MOSFT 150V 78A 15.5mOhm 71nC Qg | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 78 A | 12 mOhms | 71 nC | |||||||
|
|
23,260
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 32A 44mOhm 48nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 44 mOhms | 4 V | 71 nC | ||||
|
|
131
In-stock
|
Infineon Technologies | MOSFET MOSFT 150V 83A 15mOhm 71nC Qg | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 12 mOhms | 71 nC | |||||||
|
|
169
In-stock
|
Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC | 30 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 12 mOhms | 71 nC | |||||||
|
|
847
In-stock
|
Infineon Technologies | MOSFET MOSFT 75V 89A 9.4mOhm 71nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 89 A | 9.4 mOhms | 71 nC | |||||||
|
|
266
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 7.9 mOhms | 71 nC | OptiMOS |
