- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
377
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 64A 14mOhm 54nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 14 mOhms | 54 nC | ||||||||
|
|
980
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -70A D2PAK-2 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 70 A | 9.1 mOhms | 54 nC | OptiMOS | |||||
|
|
2
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 14mOhms 54nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 14 mOhms | 2 V to 4 V | 54 nC | Enhancement | ||||
|
|
6,000
In-stock
|
Infineon Technologies | MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 13.9 mOhms | 3 V | 54 nC | Enhancement | StrongIRFET |
