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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,560
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 260 A | 1.95 mOhms | 1.9 V | 57 nC | |||||
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401
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 24A 100mOhm 57nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 100 mOhms | 5.5 V | 57 nC | Enhancement | ||||
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807
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 17.4 mOhms | 2.1 V | 57 nC | Enhancement | OptiMOS | |||
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441
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 24A 100mOhm 57nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 24 A | 100 mOhms | 5.5 V | 57 nC | Enhancement | ||||
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4,992
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.5 mOhms | 1.2 V | 57 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.5 mOhms | 1.2 V | 57 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 17.4 mOhms | 2.1 V | 57 nC | Enhancement |
