- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
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19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
2,450
In-stock
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Infineon Technologies | MOSFET SILICON CARBIDE MOSFET | - 5 V, + 23 V | Tube | 1 Channel | 133 W | N-Channel | 650 V | 35 A | 74 mOhms | 5.7 V | 28 nC | TO-247 | 30 | Green available | |||||||||
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22,661
In-stock
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Infineon Technologies | MOSFET Pwr transistor 100V OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 8.2 mOhms | 2.2 V | 28 nC | Enhancement | ||||||||
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6,262
In-stock
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Infineon Technologies | MOSFET Pwr transistor 100V OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 8.2 mOhms | 2.2 V | 28 nC | Enhancement | ||||||||
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5,380
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 8.3 mOhms | 2.2 V | 28 nC | Enhancement | ||||||||
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2,952
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 5.1A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 1.2 Ohms | 3 V | 28 nC | CoolMOS | ||||||||
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4,312
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 8.3A 18mOhm 28nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 18 mOhms | 28 nC | ||||||||||||
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1,935
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 3.1A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 940 mOhms | 2.5 V | 28 nC | Enhancement | CoolMOS | |||||||
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468
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 64A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 64 A | 4.5 mOhms | 28 nC | Enhancement | OptiMOS | ||||||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 9.2A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9.2 A | 450 mOhms | 28 nC | CoolMOS | |||||||||
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GET PRICE |
17,260
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 9.1A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9.1 A | 460 mOhms | 2.5 V | 28 nC | Enhancement | CoolMOS | ||||||
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490
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 9.2A TO220-3 CoolMOS E6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9.2 A | 410 mOhms | 2.5 V | 28 nC | Enhancement | CoolMOS | |||||||
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495
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 3.1A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 940 mOhms | 2.5 V | 28 nC | Enhancement | CoolMOS | |||||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 8.3 mOhms | 2.2 V | 28 nC | Enhancement | ||||||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 9.2A TO220-3 CoolMOS E6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9.2 A | 410 mOhms | 2.5 V | 28 nC | Enhancement | CoolMOS | |||||||
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VIEW | Infineon Technologies | MOSFET 30V N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | Micro-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 170 A | 3.2 mOhms | 28 nC | Directfet | |||||||||||
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VIEW | Infineon Technologies | MOSFET MOSFT 20V 15A 7mOhm 28nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 15 A | 10.5 mOhms | 28 nC | ||||||||||||
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VIEW | Infineon Technologies | MOSFET 30V N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 3.5 mOhms | 28 nC | Directfet | |||||||||||
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VIEW | Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 28 nC | Enhancement | |||||||||
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4,078
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 9.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9.1 A | 460 mOhms | 2.5 V | 28 nC | Enhancement | CoolMOS |
