- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,199
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 90A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.6 mOhms | - 4 V | 130 nC | Enhancement | OptiMOS | |||
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2,500
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 90A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.6 mOhms | - 4 V | 130 nC | Enhancement | ||||
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2,525
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 27A 2.5mOhm 2.5V cpbl | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 27 A | 2.45 mOhms | 130 nC | ||||||||
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797
In-stock
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Infineon Technologies | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 5.1 mOhms | 3.7 V | 130 nC | Enhancement | StrongIRFET | |||||
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340
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 4 V | 130 nC | |||||
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80
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 2.6mOhms 49nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 240 A | 2.6 mOhms | 2 V to 4 V | 130 nC | Enhancement | ||||
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176
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 170A 3.6mOhm 130nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 170 A | 3.6 mOhms | 130 nC | ||||||||
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368
In-stock
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Infineon Technologies | MOSFET MOSFET, 60V, 210A, 3 130 nC Qg, TO-220AB | 4 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 3.4 mOhms | 20 V | 130 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 240 A | 8 mOhms | 130 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 240 A | 3.3 mOhms | 130 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 190 A | 3.3 mOhms | 130 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 75 A | 3.3 mOhms | 4 V | 130 nC | Enhancement |
