- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- 8.4 mOhms (1)
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- 950 uOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 110 nC (1)
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- 87 nC (1)
- 88 nC (3)
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- 93 nC (1)
- Applied Filters :
68 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,900
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | DirectFET-MF | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 40 V | 159 A | 1.4 mOhms | 2.2 V | 161 nC | Enhancement | StrongIRFET | |||||
|
933
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | D2PAK-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 557 A | 500 uOhms | 1 V | 307 nC | Enhancement | StrongIRFET | |||||
|
100
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | D2PAK-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 478 A | 600 uOhms | 1 V | 267 nC | Enhancement | StrongIRFET | |||||
|
7,822
In-stock
|
Infineon Technologies | MOSFET MOSFET N CH 60V 240A D2PAK | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 240 A | 1.4 mOhms | 3.7 V | 236 nC | StrongIRFET | |||||
|
2,056
In-stock
|
Infineon Technologies | MOSFET MOSFET N CH 60V 240A D2PAK | SMD/SMT | TO-263-7 | Tube | 1 Channel | Si | N-Channel | 60 V | 338 A | 1.4 mOhms | 3.7 V | 354 nC | StrongIRFET | ||||||||
|
GET PRICE |
13,472
In-stock
|
Infineon Technologies | MOSFET 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 414 A | 1.6 mOhms | 1 V | 180 nC | Enhancement | StrongIRFET | |||
|
39,600
In-stock
|
Infineon Technologies | MOSFET 40V 90A 2.5mOhm 89nC StrongIRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.4 mOhms | 2.2 V to 3.9 V | 89 nC | Enhancement | StrongIRFET | ||||
|
2,178
In-stock
|
Infineon Technologies | MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 305 A | 2.2 mOhms | 1 V | 172 nC | Enhancement | StrongIRFET | ||||
|
1,964
In-stock
|
Infineon Technologies | MOSFET 40V Single N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 217 A | 1.2 mOhms | 3 V | 123 nC | Enhancement | StrongIRFET | ||||
|
7,239
In-stock
|
Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 85 A | 6 mOhms | 3.7 V | 73 nC | StrongIRFET | |||||
|
1,422
In-stock
|
Infineon Technologies | MOSFET MOSFET, 135V, 168A 6.2 mOhm, 206 nC Qg | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 135 V | 160 A | 4.7 mOhms | 3 V | 210 nC | StrongIRFET | |||||
|
2,775
In-stock
|
Infineon Technologies | MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 164 A | 3.5 mOhms | 1 V | 56 nC | Enhancement | StrongIRFET | ||||
|
1,165
In-stock
|
Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | ||||
|
4,660
In-stock
|
Infineon Technologies | MOSFET 75V, 89A, DirectFET 5.7mOhm, 124nC Og | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 89 A | 4.5 mOhms | 3.7 V | 124 nC | StrongIRFET | |||||
|
706
In-stock
|
Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | ||||
|
3,416
In-stock
|
Infineon Technologies | MOSFET MOSFET N-CH 25V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.6 mOhms | 1.8 V | 111 nC | StrongIRFET | |||||
|
3,347
In-stock
|
Infineon Technologies | MOSFET 40V Single N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | DirectFET-MF | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 135 A | 2.3 mOhms | 2.2 V | 81 nC | Enhancement | StrongIRFET | ||||
|
2,881
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | StrongIRFET | ||||||||
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2,326
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 95 A | 3.6 mOhms | 2.2 V | 68 nC | Enhancement | StrongIRFET | ||||
|
2,341
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 12 A | 170 mOhms | 3 V | 15.3 nC | Enhancement | StrongIRFET | ||||
|
1,160
In-stock
|
Infineon Technologies | MOSFET MOSFET N-CH 40V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 265 A | 950 uOhms | 3.9 V | 127 nC | Enhancement | StrongIRFET | ||||
|
256
In-stock
|
Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 195 A | 1.8 mOhms | 3.7 V | 830 nC | Enhancement | StrongIRFET | ||||
|
GET PRICE |
7,500
In-stock
|
Infineon Technologies | MOSFET MOSFET N CH 60V 195A TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 195 A | 2 mOhms | 3.7 V | 186 nC | StrongIRFET | ||||
|
1,355
In-stock
|
Infineon Technologies | MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 87 nC | StrongIRFET | ||||||||
|
2,709
In-stock
|
Infineon Technologies | MOSFET MOSFET N-CH 40V 56A DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 3 mOhms | 3 V | 65 nC | Enhancement | StrongIRFET | ||||
|
500
In-stock
|
Infineon Technologies | MOSFET MOSFET N CH 60V 172A TO247 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 172 A | 2.75 mOhms | 3.7 V | 142 nC | StrongIRFET | |||||
|
799
In-stock
|
Infineon Technologies | MOSFET MOSFET N CH 60V 110A D2PAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 5.1 mOhms | 3.7 V | 88 nC | StrongIRFET | |||||
|
711
In-stock
|
Infineon Technologies | MOSFET MOSFET N CH 60V 195A D2PAK | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 232 A | 2.4 mOhms | 3.7 V | 279 nC | StrongIRFET | ||||||||
|
1,578
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 75 V | 68 A | 6.6 mOhms | 3.7 V | 110 nC | Enhancement | StrongIRFET | ||||||
|
1,947
In-stock
|
Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 56 A | 11.2 mOhms | 3.7 V | 59 nC | StrongIRFET |