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- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- Qg - Gate Charge :
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- 76 nC (2)
- 9.4 nC (1)
- 91 nC (1)
- 95 nC (1)
- 99 nC (2)
94 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
868
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
|
|
1,000
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11 A | 450 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | ||||
|
|
2,687
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 4.5 Ohms | 3 V | 4 nC | Enhancement | CoolMOS | ||||
|
|
671
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
|
|
435
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
|
|
488
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
|
|
387
In-stock
|
Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11 A | 450 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | ||||
|
|
281
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-247-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
|
|
346
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
|
|
494
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
|
|
325
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
|
|
1,515
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 4.5 Ohms | 3 V | 4 nC | Enhancement | CoolMOS | ||||
|
|
2,012
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 10.6A D2PAK-2 CoolMOS C6 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 3.5 V | 32 nC | CoolMOS | ||||
|
|
GET PRICE |
182,100
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 65A 26mOhm 70nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 65 A | 24 mOhms | 70 nC | Enhancement | ||||
|
|
GET PRICE |
7,650
In-stock
|
Infineon Technologies | MOSFET MOSFT 250V 60A 33mOhm 99nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 60 A | 33 mOhms | 99 nC | Enhancement | ||||
|
|
769
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 20.7A D2PAK-2 CoolMOS C3 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20.7 A | 190 mOhms | Enhancement | CoolMOS | |||||
|
|
14,020
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 9.7 mOhms | 161 nC | Enhancement | |||||
|
|
13,233
In-stock
|
Infineon Technologies | MOSFET MOSFT 150V 0.9A 1200mOhm 4.5nC | 30 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 900 mA | 1.2 Ohms | 5.5 V | 4.5 nC | |||||
|
|
4,634
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 11.3A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11.3 A | 360 mOhms | 4 V | 22 nC | CoolMOS | ||||
|
|
2,952
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 5.1A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 1.2 Ohms | 3 V | 28 nC | CoolMOS | ||||
|
|
2,436
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 5.7A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5.7 A | 800 mOhms | 3 V | 31 nC | CoolMOS | ||||
|
|
2,262
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 25mOhms 76nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 25 mOhms | 76 nC | Enhancement | |||||
|
|
2,772
In-stock
|
Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 170mOhms 26nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 2.5 A | 170 mOhms | 26 nC | Enhancement | |||||
|
|
1,498
In-stock
|
Infineon Technologies | MOSFET 200V SINGLE N-CH 55mOhms 91nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 55 mOhms | 5.5 V | 91 nC | Enhancement | ||||
|
|
5,000
In-stock
|
Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 56 mOhms | 5.5 V | 60 nC | Enhancement | ||||
|
|
53,920
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 4.2A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4.2 A | 1 Ohms | 3 V | 15 nC | CoolMOS | ||||
|
|
614
In-stock
|
Infineon Technologies | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 26mOhms | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | |||||
|
|
GET PRICE |
51,300
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 94A 23mOhm 180nCAC | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 94 A | 23 mOhms | 180 nC | Enhancement | ||||
|
|
762
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 11A TO220-3 CoolMOS C3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 11 A | 390 mOhms | Enhancement | CoolMOS | |||||
|
|
GET PRICE |
58,200
In-stock
|
Infineon Technologies | MOSFET MOSFT 150V 60A 32mOhm 60nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 60 nC |
